Factory Lead Time  

26 Weeks

Contact Plating  

Tin

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 50μA

Current - Continuous Drain (Id) @ 25℃  

12A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

160W Tc

Series  

MDmesh™

Operating Temperature  

-65°C~150°C TJ

Packaging  

Tape & Reel (TR)

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

350mOhm

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

550V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Current Rating  

12A

Base Part Number  

STB12N

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

160W

Turn On Delay Time  

20 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

350m Ω @ 6A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

39nC @ 10V

Rise Time  

10ns

Vgs (Max)  

±30V

Continuous Drain Current (ID)  

12A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

48A

Avalanche Energy Rating (Eas)  

400 mJ

Nominal Vgs  

4 V

RoHS Status  

ROHS3 Compliant

REACH SVHC  

No SVHC

Radiation Hardening  

No

Lead Free  

Lead Free