Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

13.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

160W Tc

Turn Off Delay Time  

62 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Reel (TR)

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Termination  

SMD/SMT

ECCN Code  

EAR99

Resistance  

500mOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

600V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Current Rating  

13.5A

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STB14N

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

160W

Turn On Delay Time  

26 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

500m Ω @ 6A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2220pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

75nC @ 10V

Rise Time  

18ns

Vgs (Max)  

±30V

Fall Time (Typ)  

13 ns

Continuous Drain Current (ID)  

13.5A

Threshold Voltage  

3.75V

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

54A

Dual Supply Voltage  

600V

Nominal Vgs  

3.75 V

Height  

4.6mm

Length  

10.75mm

Width  

10.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free