Factory Lead Time  

8 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

400mA Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

3W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Box (TB)

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Terminal Position  

BOTTOM

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STQ2

JESD-30 Code  

O-PBCY-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

8 Ω @ 700mA, 10V

Input Capacitance (Ciss) (Max) @ Vds  

170pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

10nC @ 10V

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±30V

Continuous Drain Current (ID)  

400mA

Drain Current-Max (Abs) (ID)  

0.4A

Drain-source On Resistance-Max  

8Ohm

Pulsed Drain Current-Max (IDM)  

1.6A

DS Breakdown Voltage-Min  

600V

Avalanche Energy Rating (Eas)  

90 mJ

RoHS Status  

ROHS3 Compliant