Factory Lead Time  

8 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

500mA Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

3.1W Tc

Operating Temperature  

-65°C~150°C TJ

Packaging  

Tape & Box (TB)

Series  

SuperMESH™

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

AVALANCHE RATED

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

not_compliant

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STQ1

Pin Count  

3

JESD-30 Code  

R-PSIP-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4.5 Ω @ 500mA, 10V

Vgs(th) (Max) @ Id  

3.7V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

160pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

7nC @ 10V

Drain to Source Voltage (Vdss)  

450V

Vgs (Max)  

±30V

Continuous Drain Current (ID)  

500mA

Drain Current-Max (Abs) (ID)  

0.5A

Pulsed Drain Current-Max (IDM)  

2A

DS Breakdown Voltage-Min  

450V

Avalanche Energy Rating (Eas)  

25 mJ

RoHS Status  

ROHS3 Compliant