Factory Lead Time  

8 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

500mA Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

3W Tc

Turn Off Delay Time  

13 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Box (TB)

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Position  

BOTTOM

Base Part Number  

STQ2

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Turn On Delay Time  

10 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4.8 Ω @ 1A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

280pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

15nC @ 10V

Rise Time  

30ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±30V

Fall Time (Typ)  

50 ns

Continuous Drain Current (ID)  

500mA

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

0.5A

Pulsed Drain Current-Max (IDM)  

2A

DS Breakdown Voltage-Min  

600V

Avalanche Energy Rating (Eas)  

120 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free