Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

4.535924g

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

160W Tc

Turn Off Delay Time  

6 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

11A Tc

Number of Elements  

1

Series  

MDmesh™

Operating Temperature  

-65°C~150°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

NRND (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

450mOhm

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

600V

Current Rating  

11A

Base Part Number  

STP11N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

160W

Turn On Delay Time  

20 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

450m Ω @ 5.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

30nC @ 10V

Rise Time  

20ns

Drain to Source Voltage (Vdss)  

650V

Vgs (Max)  

±25V

Fall Time (Typ)  

11 ns

Continuous Drain Current (ID)  

11A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

44A

Width  

12.7mm

Height  

6.35mm

Length  

31.75mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free