Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

14 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Number of Elements  

1

Power Dissipation (Max)  

125W Tc

Current - Continuous Drain (Id) @ 25℃  

12A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Series  

MDmesh™ II

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

350mOhm

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

AVALANCHE RATED

Base Part Number  

STP15N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

125W

Turn On Delay Time  

55.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

380m Ω @ 6A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

983pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

33.3nC @ 10V

Rise Time  

8ns

Vgs (Max)  

±25V

Fall Time (Typ)  

26 ns

Continuous Drain Current (ID)  

12A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

650V

Pulsed Drain Current-Max (IDM)  

48A

Width  

4.6mm

Length  

10.4mm

Height  

15.75mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free