Factory Lead Time  

16 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

11A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

90W Tc

Turn Off Delay Time  

30 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™ II

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

360mOhm

Base Part Number  

STP13N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

90W

Turn On Delay Time  

3 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

360m Ω @ 5.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

790pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

30nC @ 10V

Rise Time  

8ns

Vgs (Max)  

±25V

Fall Time (Typ)  

10 ns

Continuous Drain Current (ID)  

5.5A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

44A

Avalanche Energy Rating (Eas)  

200 mJ

Nominal Vgs  

3 V

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free