Factory Lead Time  

16 Weeks

Package / Case  

TO-220-3

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

14A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

110W Tc

Turn Off Delay Time  

61 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Number of Elements  

1

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™ II

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

250mOhm

Terminal Finish  

Matte Tin (Sn)

Base Part Number  

STP19N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

110W

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

250m Ω @ 7A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1000pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

34nC @ 10V

Rise Time  

16ns

Vgs (Max)  

±25V

Fall Time (Typ)  

17 ns

Continuous Drain Current (ID)  

14A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

56A

Avalanche Energy Rating (Eas)  

208 mJ

Height  

15.75mm

Width  

4.6mm

Length  

10.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free