Factory Lead Time  

16 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Contact Plating  

Tin

Package / Case  

TO-247-3

Number of Pins  

3

Weight  

38.000013g

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

68A Tc

Power Dissipation (Max)  

450W Tc

Turn Off Delay Time  

155 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™ II Plus

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Base Part Number  

STW70N

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

450W

Turn On Delay Time  

32 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

40m Ω @ 34A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

5200pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

118nC @ 10V

Rise Time  

17ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±25V

Fall Time (Typ)  

9 ns

Continuous Drain Current (ID)  

68A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

25V

Drain-source On Resistance-Max  

0.04Ohm

Pulsed Drain Current-Max (IDM)  

272A

DS Breakdown Voltage-Min  

600V

Avalanche Energy Rating (Eas)  

9000 mJ

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free