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STW88N65M5 - STMicroelectronics

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Kynix Teil #: KY13-STW88N65M5

Hersteller Teil #: STW88N65M5

Produktkategorie: Transistors - FETs, MOSFETs - Single

Hersteller: STMicroelectronics

Beschreibung: MOSFET N-Ch 650V 0.024 Ohm 84A MDMesh V

Verpackung: TO-247-3

Menge:

Bleifrei-Status / RoHS-Status: Bleifrei / RoHS-konform

Vorlaufzeit: 3(168 Hours)

Datenblatt: datasheet

STW88N65M5 Datenblatt

Attribute

Attribute Value

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time

17 Weeks

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

84A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

Power Dissipation (Max)

450W Tc

Turn Off Delay Time

141 ns

Operating Temperature

150°C TJ

Packaging

Tube

Series

MDmesh™ V

JESD-609 Code

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

24mOhm

Base Part Number

STW88N

Pin Count

Number of Channels

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

450W

Case Connection

DRAIN

Turn On Delay Time

141 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

29m Ω @ 42A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

8825pF @ 100V

Gate Charge (Qg) (Max) @ Vgs

204nC @ 10V

Vgs (Max)

±25V

Continuous Drain Current (ID)

84A

Threshold Voltage

Gate to Source Voltage (Vgs)

25V

Drain to Source Breakdown Voltage

650V

Avalanche Energy Rating (Eas)

2000 mJ

Max Junction Temperature (Tj)

150°C

Nominal Vgs

4 V

Height

24.45mm

Length

15.75mm

Width

5.15mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

ROHS3 Compliant

Lead Free

Teilenummer	Paket	Beschreibung
STW88N65M5	TO-247-3	MOSFET N-Ch 650V 0.024 Ohm 84A MDMesh V
STW70N60M2	TO-247-3	Trans MOSFET N-CH 600V 68A 3-Pin(3 Tab) TO-247 Tube
STY60NM50	TO-247-3	MOSFET N-CH 500V 60A MAX247
STW78N65M5	TO-247-3	MOSFET N-CH 650V 69A TO247
IPW65R037C6FKSA1	TO-247-3	Trans MOSFET N-CH 700V 83.2A 3-Pin(3 Tab) TO-247

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Why do we use N-channel MOSFET?

N-channel MOSFETs are the most often utilized and easiest to deal with. They are also less expensive to produce and so accessible at cheaper prices with greater performance than p-channel MOSFETs.

Why is N-channel MOSFET better than P-channel?

Electrons, which are carriers in an n-channel device, have more mobility than holes, which are carriers in a p-channel device. As a result, an n-channel device outperforms a p-channel device.

What is N channel MOSFET?

What is N channel MOSFET? N-Channel MOSFETs are a kind of metal oxide semiconductor field-effect transistor. They are classified as field-effect transistors (FET). The capacitor is used to power MOSFET transistors. An insulated-gate field-effect transistor is another name for this type of transistor (IGFET).