Factory Lead Time  

16 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

111 ns

Current - Continuous Drain (Id) @ 25℃  

29A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

190W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Series  

FDmesh™ II

Operating Temperature  

150°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

110MOhm

Additional Feature  

ULTRA-LOW RESISTANCE

Base Part Number  

STW34N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

190W

Case Connection  

DRAIN

Turn On Delay Time  

30 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

110m Ω @ 14.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2785pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

80.4nC @ 10V

Rise Time  

53.4ns

Vgs (Max)  

±25V

Fall Time (Typ)  

61.8 ns

Continuous Drain Current (ID)  

29A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

600V

Height  

20.15mm

Length  

15.75mm

Width  

5.15mm

RoHS Status  

ROHS3 Compliant

REACH SVHC  

No SVHC

Radiation Hardening  

No

Lead Free  

Lead Free