Factory Lead Time  

4 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

1.8g

Transistor Element Material  

SILICON

Turn Off Delay Time  

72 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

15A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

170W Tc

Series  

UniFET™

Published  

2007

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

300MOhm

Terminal Finish  

Tin (Sn)

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

170W

Turn On Delay Time  

26 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

300m Ω @ 7.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1750pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

36nC @ 10V

Rise Time  

55ns

Vgs (Max)  

±30V

Fall Time (Typ)  

40 ns

Continuous Drain Current (ID)  

15A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

400V

Pulsed Drain Current-Max (IDM)  

60A

Nominal Vgs  

3 V

Width  

4.83mm

Height  

16.51mm

Length  

10.67mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free