Factory Lead Time  

12 Weeks

Package / Case  

TO-220-3

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

40 ns

Power Dissipation (Max)  

110W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Series  

STripFET™ III

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Base Part Number  

STP95

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

110W

Case Connection  

DRAIN

Turn On Delay Time  

15 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

6.2m Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

54nC @ 10V

Rise Time  

50ns

Vgs (Max)  

±20V

Fall Time (Typ)  

15 ns

Continuous Drain Current (ID)  

80A

Threshold Voltage  

2V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0062Ohm

Drain to Source Breakdown Voltage  

40V

Avalanche Energy Rating (Eas)  

400 mJ

Width  

4.6mm

Length  

10.4mm

Height  

15.75mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free