Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

75A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

60W Tc

Turn Off Delay Time  

37 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

DeepGATE™, STripFET™ VI

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Position  

SINGLE

Base Part Number  

STP75N

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

60W

Case Connection  

DRAIN

Turn On Delay Time  

9.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

5.9m Ω @ 37.5A, 10V

Vgs(th) (Max) @ Id  

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

2030pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

23.8nC @ 4.5V

Rise Time  

30ns

Drain to Source Voltage (Vdss)  

30V

Vgs (Max)  

±20V

Fall Time (Typ)  

12 ns

Continuous Drain Current (ID)  

75A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0084Ohm

Pulsed Drain Current-Max (IDM)  

300A

DS Breakdown Voltage-Min  

30V

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free