Factory Lead Time  

20 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

110W Tc

Turn Off Delay Time  

40 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Base Part Number  

STP120

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

110W

Case Connection  

DRAIN

Turn On Delay Time  

20 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4.3m Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3850pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

65nC @ 10V

Rise Time  

70ns

Drain to Source Voltage (Vdss)  

40V

Vgs (Max)  

±20V

Fall Time (Typ)  

20 ns

Continuous Drain Current (ID)  

80A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

DS Breakdown Voltage-Min  

40V

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free