Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

35W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

46A Tc

Turn Off Delay Time  

52 ns

Series  

STripFET™ III

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

9.6MOhm

Additional Feature  

ULTRA LOW RESISTANCE

Terminal Position  

SINGLE

Base Part Number  

STF13

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

35W

Turn On Delay Time  

17 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

9.6m Ω @ 23A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

3305pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

57nC @ 10V

Rise Time  

38ns

Vgs (Max)  

±20V

Fall Time (Typ)  

7.2 ns

Continuous Drain Current (ID)  

46A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

100V

Pulsed Drain Current-Max (IDM)  

184A

Avalanche Energy Rating (Eas)  

125 mJ

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free