Factory Lead Time  

13 Weeks

Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

45A Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 250μA

Turn Off Delay Time  

46 ns

Power Dissipation (Max)  

30W Tc

Number of Elements  

1

Series  

DeepGATE™, STripFET™ VII

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

80mOhm

Base Part Number  

STF100N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

30W

Case Connection  

ISOLATED

Turn On Delay Time  

27 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

8m Ω @ 22.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4369pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

61nC @ 10V

Rise Time  

40ns

Vgs (Max)  

±20V

Fall Time (Typ)  

15 ns

Continuous Drain Current (ID)  

45A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

100V

Pulsed Drain Current-Max (IDM)  

180A

Avalanche Energy Rating (Eas)  

400 mJ

Length  

10.4mm

Height  

16.4mm

Width  

4.6mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free