Factory Lead Time  

16 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

13A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

55 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Number of Elements  

1

Power Dissipation (Max)  

110W Tc

Series  

MDmesh™ II

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

285mOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Terminal Position  

SINGLE

Base Part Number  

STW18N

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

80W

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

285m Ω @ 6.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1000pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

35nC @ 10V

Rise Time  

15ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±25V

Fall Time (Typ)  

25 ns

Continuous Drain Current (ID)  

13A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

25V

Pulsed Drain Current-Max (IDM)  

52A

DS Breakdown Voltage-Min  

600V

Height  

20.15mm

Length  

15.75mm

Width  

5.15mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free