Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

120A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 1mA

Number of Elements  

1

Power Dissipation (Max)  

330W Tc

Series  

SAFeFET™

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

NRND (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Base Part Number  

STP180

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4.2m Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4560pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

110nC @ 10V

Rise Time  

250ns

Vgs (Max)  

±20V

Fall Time (Typ)  

115 ns

Continuous Drain Current (ID)  

120A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0042Ohm

Drain to Source Breakdown Voltage  

33V

Pulsed Drain Current-Max (IDM)  

480A

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant