Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

310W Tc

Turn Off Delay Time  

140 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

120A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

40V

Current Rating  

120A

Base Part Number  

STP200

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

310W

Turn On Delay Time  

30 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.7m Ω @ 90A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

5100pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

210nC @ 10V

Rise Time  

320ns

Vgs (Max)  

±20V

Fall Time (Typ)  

120 ns

Continuous Drain Current (ID)  

120A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

40V

Pulsed Drain Current-Max (IDM)  

480A

Length  

10.4mm

Height  

15.75mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free