Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Contact Plating  

Tin

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

90W Tc

Turn Off Delay Time  

35 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

6.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™

JESD-609 Code  

e3

Part Status  

NRND (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

1.05Ohm

Base Part Number  

STP7N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

90W

Case Connection  

ISOLATED

Turn On Delay Time  

20 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.05 Ω @ 3.25A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

620pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

18nC @ 10V

Rise Time  

8ns

Vgs (Max)  

±30V

Fall Time (Typ)  

10 ns

Continuous Drain Current (ID)  

3.25A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

6.5A

Drain to Source Breakdown Voltage  

800V

Pulsed Drain Current-Max (IDM)  

26A

Avalanche Energy Rating (Eas)  

240 mJ

Length  

10.4mm

Width  

4.6mm

Height  

15.75mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free