Factory Lead Time  

12 Weeks

Package / Case  

TO-220-3

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Turn Off Delay Time  

43 ns

Power Dissipation (Max)  

125W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

7A Tc

Series  

SuperMESH™

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

600V

Current Rating  

7A

Base Part Number  

STP9N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

125W

Turn On Delay Time  

19 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

950m Ω @ 3.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1110pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

53nC @ 10V

Rise Time  

17ns

Vgs (Max)  

±30V

Fall Time (Typ)  

15 ns

Continuous Drain Current (ID)  

3.5A

Threshold Voltage  

3.75V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

7A

Drain-source On Resistance-Max  

0.95Ohm

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

28A

Width  

4.6mm

Length  

10.4mm

Height  

9.15mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free