Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

6.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

70W Tc

Turn Off Delay Time  

52.5 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™ II

JESD-609 Code  

e3

Part Status  

NRND (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Base Part Number  

STP9N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

70W

Turn On Delay Time  

28 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

745m Ω @ 3.25A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

452pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

17.4nC @ 10V

Rise Time  

23ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±25V

Fall Time (Typ)  

26.7 ns

Continuous Drain Current (ID)  

6.5A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain Current-Max (Abs) (ID)  

9A

Drain-source On Resistance-Max  

0.745Ohm

Pulsed Drain Current-Max (IDM)  

26A

DS Breakdown Voltage-Min  

600V

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free