Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

9.071847g

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

10V 5V

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

60A Tc

Power Dissipation (Max)  

110W Tc

Turn Off Delay Time  

55 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

1V @ 250μA

Operating Temperature  

-65°C~175°C TJ

Packaging  

Tube

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

14mOhm

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

LOW THRESHOLD, AVALANCHE RATED

Voltage - Rated DC  

60V

Current Rating  

60A

Base Part Number  

STP60N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

110W

Case Connection  

DRAIN

Turn On Delay Time  

35 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

14m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

66nC @ 4.5V

Rise Time  

220ns

Vgs (Max)  

±15V

Fall Time (Typ)  

30 ns

Continuous Drain Current (ID)  

60A

Threshold Voltage  

1V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

15V

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

240A

Height  

9.15mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free