Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

4.535924g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

55A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V 5V

Number of Elements  

1

Power Dissipation (Max)  

95W Tc

Turn Off Delay Time  

40 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

1.7V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

18mOhm

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

60V

Current Rating  

55A

Base Part Number  

STP55N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

95W

Case Connection  

DRAIN

Turn On Delay Time  

20 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

18m Ω @ 27.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1700pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

37nC @ 4.5V

Rise Time  

100ns

Vgs (Max)  

±16V

Fall Time (Typ)  

20 ns

Continuous Drain Current (ID)  

55A

Threshold Voltage  

1.7V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

16V

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

220A

Nominal Vgs  

1.7 V

Height  

9.15mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free