Factory Lead Time  

17 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Manufacturer Package Identifier  

STW42N65M5

Current - Continuous Drain (Id) @ 25℃  

33A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

190W Tc

Turn Off Delay Time  

65 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™ V

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

79mOhm

Terminal Finish  

Tin (Sn)

Base Part Number  

STW42N

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

190W

Turn On Delay Time  

61 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

79m Ω @ 16.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4650pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

100nC @ 10V

Rise Time  

24ns

Vgs (Max)  

±25V

Fall Time (Typ)  

13 ns

Continuous Drain Current (ID)  

33A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

650V

Avalanche Energy Rating (Eas)  

950 mJ

Max Junction Temperature (Tj)  

150°C

Height  

24.45mm

Length  

15.75mm

Width  

5.15mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free