Factory Lead Time  

17 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

51 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 100μA

Current - Continuous Drain (Id) @ 25℃  

8A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

130W Tc

Series  

SuperMESH5™

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STW10N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

130W

Turn On Delay Time  

22 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

800m Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

630pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

22nC @ 10V

Rise Time  

14ns

Drain to Source Voltage (Vdss)  

950V

Vgs (Max)  

±30V

Fall Time (Typ)  

15 ns

Continuous Drain Current (ID)  

8A

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

8A

Drain-source On Resistance-Max  

0.8Ohm

DS Breakdown Voltage-Min  

950V

Height  

20.15mm

Length  

15.75mm

Width  

5.15mm

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free