Factory Lead Time  

17 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

9A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

90W Tc

Turn Off Delay Time  

33 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 100μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH5™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

1.25Ohm

Terminal Position  

SINGLE

Base Part Number  

STW6N

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

90W

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.25 Ω @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

450pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

13nC @ 10V

Rise Time  

12ns

Vgs (Max)  

±30V

Fall Time (Typ)  

21 ns

Continuous Drain Current (ID)  

9A

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

9A

Drain to Source Breakdown Voltage  

950V

Pulsed Drain Current-Max (IDM)  

36A

Avalanche Energy Rating (Eas)  

90 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free