Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

68A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

446W Tc

Turn Off Delay Time  

40 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™ II

Part Status  

NRND (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STW60N

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

446W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

43m Ω @ 34A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

5790pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

178nC @ 10V

Rise Time  

36ns

Vgs (Max)  

±25V

Fall Time (Typ)  

27.5 ns

Continuous Drain Current (ID)  

68A

Gate to Source Voltage (Vgs)  

25V

Drain-source On Resistance-Max  

0.043Ohm

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

272A

Avalanche Energy Rating (Eas)  

551 mJ

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free