Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

15.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

190W Tc

Turn Off Delay Time  

91 ns

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

SuperMESH3™

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Resistance  

280mOhm

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

AVALANCHE ENERGY RATED

Base Part Number  

STP17N

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

190W

Turn On Delay Time  

22 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

380m Ω @ 7.5A, 10V

Vgs(th) (Max) @ Id  

4.5V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds  

2500pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

94nC @ 10V

Rise Time  

26ns

Vgs (Max)  

±30V

Fall Time (Typ)  

63 ns

Continuous Drain Current (ID)  

15.5A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

620V

Pulsed Drain Current-Max (IDM)  

60A

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free