Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

28A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

110W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 100μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™ V

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Additional Feature  

ULTRA LOW-ON RESISTANCE

Terminal Position  

SINGLE

Base Part Number  

STP52N

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

110W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

65m Ω @ 14A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1770pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

47nC @ 10V

Rise Time  

18ns

Vgs (Max)  

±25V

Fall Time (Typ)  

64 ns

Continuous Drain Current (ID)  

28A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain-source On Resistance-Max  

0.065Ohm

Drain to Source Breakdown Voltage  

250V

Pulsed Drain Current-Max (IDM)  

112A

Avalanche Energy Rating (Eas)  

230 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant