Factory Lead Time  

12 Weeks

Package / Case  

TO-220-3

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Turn Off Delay Time  

63 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Power Dissipation (Max)  

160W Tc

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

45A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Series  

STripFET™

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Resistance  

69MOhm

Base Part Number  

STP50N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

160W

Turn On Delay Time  

45 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

69m Ω @ 22A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2670pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

68.2nC @ 10V

Rise Time  

26ns

Vgs (Max)  

±20V

Fall Time (Typ)  

20 ns

Continuous Drain Current (ID)  

22A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

45A

Drain to Source Breakdown Voltage  

250V

Dual Supply Voltage  

250V

Nominal Vgs  

3 V

Width  

4.6mm

Height  

15.75mm

Length  

10.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free