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STD10NF10T4 Datenblatt

| Telefon | Teilenummer | Paket | Beschreibung |
|---|---|---|---|
| STD10NF10T4 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Trans MOSFET N-CH 100V 13A 3-Pin(2 Tab) TO-252 T/R | |
| FDD5614P | TO-252-3, DPak (2 Leads + Tab), SC-63 | ON SEMICONDUCTOR - FDD5614P - P CHANNEL MOSFET, 60V, 15A, TO-252 | |
| STD12NF06T4 | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET N-CH 60V 12A DPAK | |
| STD15NF10T4 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Trans MOSFET N-CH 100V 23A 3-Pin(2 Tab) TO-252 T/R | |
| STD4NS25T4 | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET N-Ch 250 Volt 4 Amp |
Power MOSFETs are commonly used in automotive electronics, particularly as switching devices in electronic control units, and as power converters in modern electric vehicles. The insulated-gate bipolar transistor (IGBT), a hybrid MOS-bipolar transistor, is also used for a wide variety of applications.
Power MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) are three-terminal silicon devices that function by applying a signal to the gate that controls current conduction between source and drain.
The MOSFET's body diode provides a path for inductive load current to by-pass the MOSFET during its 'OFF' state. It is therefore an important feature in many applications including synchronous rectification (AC-DC and DC-DC) and motor control (full-bridge & half-bridge).
Datenblatt
| Menge. | Stückpreis |
|---|---|
| 1+: | $1.80353 |
| 10+: | $1.70145 |
| 100+: | $1.60514 |
| 500+: | $1.51428 |
| 1000+: | $1.42857 |
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