Factory Lead Time  

12 Weeks

Package / Case  

TO-220-3

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

300W Tc

Turn Off Delay Time  

135 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

1V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Drive Voltage (Max Rds On, Min Rds On)  

5V 10V

Number of Elements  

1

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

6.5mOhm

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

LOGIC LEVEL COMPATIBLE

Voltage - Rated DC  

55V

Current Rating  

80A

Base Part Number  

STP80N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Case Connection  

DRAIN

Turn On Delay Time  

32 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

6.5m Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4850pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

136nC @ 5V

Rise Time  

180ns

Vgs (Max)  

±16V

Fall Time (Typ)  

80 ns

Continuous Drain Current (ID)  

80A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

16V

Drain to Source Breakdown Voltage  

55V

Width  

4.6mm

Height  

15.75mm

Length  

10.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free