Factory Lead Time  

12 Weeks

Package / Case  

TO-220-3

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Weight  

9.071847g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

70 ns

Power Dissipation (Max)  

300W Tc

Number of Elements  

1

Series  

STripFET™ II

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

8mOhm

Terminal Finish  

Matte Tin (Sn)

Voltage - Rated DC  

55V

Current Rating  

80A

Base Part Number  

STP85N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Case Connection  

DRAIN

Turn On Delay Time  

25 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

8m Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3700pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

150nC @ 10V

Rise Time  

100ns

Vgs (Max)  

±20V

Fall Time (Typ)  

35 ns

Continuous Drain Current (ID)  

80A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

55V

Avalanche Energy Rating (Eas)  

980 mJ

Height  

6.35mm

Width  

12.7mm

Length  

38.1mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free