Factory Lead Time  

17 Weeks

Contact Plating  

Tin

Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

35A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Turn Off Delay Time  

79.5 ns

Power Dissipation (Max)  

40W Tc

Number of Elements  

1

Series  

MDmesh™ V

Packaging  

Tube

Operating Temperature  

150°C TJ

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Additional Feature  

ULTRA LOW RESISTANCE

Base Part Number  

STF45N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

40W

Case Connection  

ISOLATED

Turn On Delay Time  

79.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

78m Ω @ 19.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3375pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

91nC @ 10V

Vgs (Max)  

±25V

Continuous Drain Current (ID)  

35A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain-source On Resistance-Max  

0.078Ohm

Drain to Source Breakdown Voltage  

650V

Pulsed Drain Current-Max (IDM)  

140A

Avalanche Energy Rating (Eas)  

810 mJ

Height  

16.4mm

Width  

4.6mm

Length  

10.4mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free