Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

2W Ta 37W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

4.1A Ta

Published  

2010

Packaging  

Bulk

Operating Temperature  

-55°C~150°C TJ

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Pin Count  

3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

2W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2.7 Ω @ 3.25A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

850pF @ 30V

Gate Charge (Qg) (Max) @ Vgs  

44nC @ 10V

Vgs (Max)  

±30V

Continuous Drain Current (ID)  

4.1A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

6.5A

Drain to Source Breakdown Voltage  

900V

RoHS Status  

RoHS Compliant