Factory Lead Time  

12 Weeks

Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Weight  

4.535924g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

4.3A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Turn Off Delay Time  

45 ns

Power Dissipation (Max)  

30W Tc

Number of Elements  

1

Series  

PowerMESH™

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

2.4Ohm

Terminal Finish  

Matte Tin (Sn) - annealed

Base Part Number  

STP5N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

30W

Case Connection  

ISOLATED

Turn On Delay Time  

18 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2.4 Ω @ 2.15A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

910pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

45.5nC @ 10V

Rise Time  

25ns

Vgs (Max)  

±30V

Fall Time (Typ)  

30 ns

Continuous Drain Current (ID)  

4.3A

Threshold Voltage  

3.75V

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

800V

Height  

9.3mm

Width  

4.6mm

Length  

10.4mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free