Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

25W Tc

Turn Off Delay Time  

23.1 ns

Current - Continuous Drain (Id) @ 25℃  

4.4A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Series  

UltraFASTmesh™

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - annealed

Terminal Position  

SINGLE

Base Part Number  

STF5N

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

25W

Case Connection  

ISOLATED

Turn On Delay Time  

11.4 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.5 Ω @ 2.2A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

529pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

16.9nC @ 10V

Rise Time  

13.6ns

Drain to Source Voltage (Vdss)  

525V

Vgs (Max)  

±30V

Fall Time (Typ)  

15 ns

Continuous Drain Current (ID)  

4.4A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

DS Breakdown Voltage-Min  

525V

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant