Package / Case  

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

7A Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Turn Off Delay Time  

37 ns

Power Dissipation (Max)  

70W Tc

Number of Elements  

1

Series  

FDmesh™ II

Packaging  

Tape & Reel (TR)

Operating Temperature  

150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

700mOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Base Part Number  

STD8N

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

70W

Case Connection  

DRAIN

Turn On Delay Time  

9 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

700m Ω @ 3.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

560pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

22nC @ 10V

Rise Time  

22ns

Vgs (Max)  

±30V

Fall Time (Typ)  

22 ns

Continuous Drain Current (ID)  

7A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

7A

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

28A

Avalanche Energy Rating (Eas)  

200 mJ

Nominal Vgs  

4 V

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free