Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

51A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Turn Off Delay Time  

188 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Power Dissipation (Max)  

350W Tc

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

FDmesh™ II

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

60MOhm

Terminal Finish  

Tin (Sn)

Base Part Number  

STW55N

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

350W

Turn On Delay Time  

33 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

60m Ω @ 25.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

5800pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

190nC @ 10V

Rise Time  

68ns

Vgs (Max)  

±25V

Fall Time (Typ)  

96 ns

Continuous Drain Current (ID)  

51A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-247AC

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

204A

Avalanche Energy Rating (Eas)  

850 mJ

Max Junction Temperature (Tj)  

150°C

Height  

24.45mm

Length  

15.75mm

Width  

5.15mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free