Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

9A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

90W Tc

Turn Off Delay Time  

50 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™ II

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

480mOhm

Terminal Finish  

Matte Tin (Sn)

Base Part Number  

STP10

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

90W

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

480m Ω @ 4.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

850pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

25nC @ 10V

Rise Time  

8ns

Vgs (Max)  

±25V

Fall Time (Typ)  

20 ns

Continuous Drain Current (ID)  

4.5A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain Current-Max (Abs) (ID)  

9A

Drain to Source Breakdown Voltage  

650V

Nominal Vgs  

3 V

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free