Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

6A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

150W Tc

Turn Off Delay Time  

58 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 100μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH3™

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

1.95Ohm

Base Part Number  

STP6N

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

150W

Turn On Delay Time  

30 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2.4 Ω @ 2.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1050pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

34nC @ 10V

Rise Time  

12ns

Drain to Source Voltage (Vdss)  

1200V

Vgs (Max)  

±30V

Fall Time (Typ)  

32 ns

Continuous Drain Current (ID)  

6A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

6A

Drain to Source Breakdown Voltage  

1.2kV

Pulsed Drain Current-Max (IDM)  

20A

Max Junction Temperature (Tj)  

150°C

Nominal Vgs  

4 V

Height  

19.68mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free