Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

4

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

75 ns

Power Dissipation (Max)  

300W Tc

Number of Elements  

1

Series  

STripFET™

Packaging  

Tape & Reel (TR)

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

8mOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Voltage - Rated DC  

55V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Current Rating  

80A

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STB80N

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Case Connection  

DRAIN

Turn On Delay Time  

20 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

8m Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3850pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

155nC @ 10V

Rise Time  

85ns

Vgs (Max)  

±20V

Fall Time (Typ)  

25 ns

Continuous Drain Current (ID)  

80A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

55V

Height  

4.6mm

Length  

10.4mm

Width  

9.35mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free