Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

4.535924g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

300W Tc

Turn Off Delay Time  

165 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

18mOhm

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

-55V

Current Rating  

-80A

Base Part Number  

STP80P

Pin Count  

3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Turn On Delay Time  

35 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

18m Ω @ 40A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

5500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

258nC @ 10V

Rise Time  

190ns

Drain to Source Voltage (Vdss)  

55V

Vgs (Max)  

±16V

Fall Time (Typ)  

80 ns

Continuous Drain Current (ID)  

80A

Threshold Voltage  

-3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

16V

Drain to Source Breakdown Voltage  

-55V

Height  

9.15mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free