Factory Lead Time  

17 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

30A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

66 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Number of Elements  

1

Power Dissipation (Max)  

190W Tc

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™ V

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

95MOhm

Base Part Number  

STP38N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

190W

Case Connection  

ISOLATED

Turn On Delay Time  

66 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

95m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3000pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

71nC @ 10V

Rise Time  

9ns

Vgs (Max)  

±25V

Fall Time (Typ)  

9 ns

Continuous Drain Current (ID)  

30A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

650V

Avalanche Energy Rating (Eas)  

660 mJ

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free