Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Turn Off Delay Time  

19 ns

Power Dissipation (Max)  

45W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

2.4A Tc

Series  

SuperMESH™

Packaging  

Tape & Reel (TR)

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - annealed

Voltage - Rated DC  

600V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Current Rating  

2.4A

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STB3N

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

45W

Turn On Delay Time  

9 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.6 Ω @ 1.2A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

311pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

11.8nC @ 10V

Rise Time  

14ns

Vgs (Max)  

±30V

Fall Time (Typ)  

14 ns

Continuous Drain Current (ID)  

1.2A

Threshold Voltage  

3.75V

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

9.6A

Width  

10.4mm

Length  

10.75mm

Height  

4.6mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free