Factory Lead Time  

17 Weeks

Package / Case  

TO-247-3

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

18.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 100μA

Turn Off Delay Time  

52 ns

Power Dissipation (Max)  

250W Tc

Number of Elements  

1

Series  

SuperMESH5™

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

299MOhm

Terminal Finish  

Matte Tin (Sn)

Terminal Position  

SINGLE

Base Part Number  

STW21N

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Number of Channels  

1

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

250W

Turn On Delay Time  

17 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

299m Ω @ 9A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1645pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

43nC @ 10V

Rise Time  

27ns

Vgs (Max)  

±30V

Fall Time (Typ)  

40 ns

Continuous Drain Current (ID)  

18.5A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

900V

Pulsed Drain Current-Max (IDM)  

68A

Max Junction Temperature (Tj)  

150°C

Height  

24.45mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free