Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

6A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

110W Tc

Turn Off Delay Time  

47 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Number of Elements  

1

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

1.2Ohm

Terminal Finish  

Tin (Sn)

Base Part Number  

STB6N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

110W

Turn On Delay Time  

14 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.2 Ω @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

905pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

46nC @ 10V

Rise Time  

14ns

Fall Time (Typ)  

19 ns

Continuous Drain Current (ID)  

6A

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

6A

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

24A

Avalanche Energy Rating (Eas)  

210 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free